The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jun. 29, 2022
Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Tsmc China Company Limited, Shanghai, CN;

Inventors:

Ya-Qi Ma, Shanghai, CN;

Lei Pan, Shanghai, CN;

Zhen Tang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H10D 84/40 (2025.01);
U.S. Cl.
CPC ...
H10D 89/811 (2025.01); H10D 84/40 (2025.01); H10D 89/921 (2025.01);
Abstract

A method is provided and includes the operation below: discharging electrostatic charges from a pad to a first voltage terminal through a first active region coupled to the pad and a second active region coupled between the first active region and the first voltage terminal, in which the first active region and the second active region are the same conductivity type and have different widths from each other, and the first active region and the second active region are included in a first transistor having a first breakdown voltage; and discharging the electrostatic charges through an ESD primary circuit having a first terminal coupled with the first active region and a second terminal coupled with the first voltage terminal. The ESD primary circuit has a trigger voltage lower than the first breakdown voltage.


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