The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Mar. 18, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shang-Syuan Ciou, Hsinchu, TW;

Hui-Zhong Zhuang, Hsinchu, TW;

Jung-Chan Yang, Hsinchu, TW;

Li-Chun Tien, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 30/60 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 64/254 (2025.01); H10D 30/601 (2025.01); H10D 62/149 (2025.01);
Abstract

A system for processing a layout of a semiconductor device includes a processor, and a computer readable storage medium. The processor is configured to execute instructions to generate an active region layout pattern extending in a first direction, generate a plurality of gate layout patterns extending in a second direction different from the first direction, wherein the plurality of gate layout patterns extends across the active region layout pattern, generate a plurality of source/drain region layout patterns in the active region layout pattern on opposite sides of the plurality of gate layout patterns, generate a plurality of source/drain contact layout patterns overlapping the plurality of source/drain region layout patterns, and generate one or more mark layers. Each of the mark layers labels a corresponding source/drain contact layout pattern of the plurality of source/drain contact layout patterns and is usable to indicate a width of the corresponding source/drain layout pattern.


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