The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Aug. 27, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 21/3105 (2006.01); H01L 21/3115 (2006.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H01L 21/31051 (2013.01); H01L 21/31155 (2013.01); H01L 21/76224 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01);
Abstract
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, first and second fin structures formed over the substrate, and an isolation structure between the first and second fin structures. The isolation structure can include a lower portion and an upper portion. The lower portion of the isolation structure can include a metal-free dielectric material. The upper portion of the isolation structure can include a metallic element and silicon.