The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Nov. 15, 2021
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Carsten Schaeffer, Annenheim, AT;
Patrick Hanekamp, Laaber, DE;
Oliver Humbel, Maria Elend, AT;
Angelika Koprowski, Klagenfurt, AT;
Wolfgang Lehnert, Lintach, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 21/02 (2006.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 62/112 (2025.01); H01L 21/02118 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H10D 64/111 (2025.01);
Abstract
A semiconductor device and a method of forming a semiconductor device are provided. In an embodiment, the semiconductor device comprises a device region, an edge termination region surrounding the device region, a first metal feature in the edge termination region, a first conformal ion diffusion barrier layer over the first metal feature, and a first conformal chemical protection layer over the first conformal ion diffusion barrier layer.