The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Mar. 11, 2022
Nxp Usa, Inc., Austin, TX (US);
Mark Douglas Hall, Austin, TX (US);
Craig Allan Cavins, Austin, TX (US);
Tushar Praful Merchant, Austin, TX (US);
Asanga H. Perera, West Lake Hills, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A semiconductor device and fabrication method are described for forming a nanosheet transistor device by forming a nanosheet transistor stack (-) of alternating Si and SiGe layers which are selectively processed to form metal-containing current terminal or source/drain regions () and to form control terminal electrodes (A-D) which replace the SiGe layers in the nanosheet transistor stack and are positioned between the Si layers which form transistor channel regions in the nanosheet transistor stack to connect the metal source/drain regions, thereby forming a nanosheet transistor device.