The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Feb. 02, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, TW;
Inventors:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H01L 21/30604 (2013.01); H01L 21/762 (2013.01); H10D 30/62 (2025.01); H10D 62/115 (2025.01); H10D 62/118 (2025.01);
Abstract
A semiconductor device with densified dielectric structures and a method of fabricating the same are disclosed. The method includes forming a fin structure, forming an isolation structure adjacent to the fin structure, forming a source/drain (S/D) region on the fin structure, depositing a flowable dielectric layer on the isolation structure, converting the flowable dielectric layer into a non-flowable dielectric layer, performing a densification process on the non-flowable dielectric layer, and repeating the depositing, converting, and performing to form a stack of densified dielectric layers surrounding the S/D region.