The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12363898 B1

Date of Patent:

Jul. 15, 2025

Filed:

Jan. 05, 2022

3d nand memory device with non-uniform channel structure and method for forming the same

Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

LinChun Wu, Wuhan, CN;

Wenxi Zhou, Wuhan, CN;

Zhiliang Xia, Wuhan, CN;

ZongLiang Huo, Wuhan, CN;

Assignee:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Caleb E Henry

Int. Cl.

CPC ...

H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);

U.S. Cl.

CPC ...

H10B 43/27 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);

Abstract

Aspects of the disclosure provide a semiconductor device including a first die. The first die includes a first stack of layers including a semiconductor layer on a backside of the first die. A second stack of layers is formed that includes gate layers and first insulating layers alternatingly stacked on a face side of the first die. The face side is opposite to the backside. A vertical structure includes a first portion disposed in the first stack of layers and a second portion extending through the second stack of layers. The first portion has a different dimension than the second portion in a direction parallel to a main surface of the first die.

Find Patent Forward Citations