The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Aug. 04, 2022
Applicants:

Changxin Memory Technologies, Inc., Hefei, CN;

Beijing Superstring Academy of Memory Technology, Beijing, CN;

Inventors:

Deyuan Xiao, Hefei, CN;

Yong Yu, Hefei, CN;

Guangsu Shao, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01); H10D 30/67 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); H10D 30/025 (2025.01); H10D 30/63 (2025.01); H10D 30/6735 (2025.01); H10D 64/518 (2025.01);
Abstract

The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method of a semiconductor structure includes: providing a substrate; forming an silicon pillar on the substrate; pre-processing the silicon pillar, to form an active pillar including a first segment, a second segment, and a third segment, where the second segment includes a first sub-segment and a second sub-segment, and a cross-sectional area of the second sub-segment is smaller than that of the first sub-segment; forming a gate oxide layer; and forming a word line structure surrounding the second segment, where the word line structure includes a first word line structure and a second word line structure that are made of different materials.


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