The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Aug. 08, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chang-Yi Yang, Hsinchu, TW;

Po-Yao Chuang, Hsinchu, TW;

Shin-Puu Jeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2023.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/16 (2023.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/5383 (2013.01); H01L 25/165 (2013.01); H01L 25/50 (2013.01); H01L 21/6835 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01);
Abstract

A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.


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