The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

May. 23, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ching-Jung Yang, Taoyuan, TW;

Hsien-Wei Chen, Hsinchu, TW;

Ming-Fa Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/76802 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/09 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 21/76807 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01);
Abstract

A semiconductor structure includes a stacked die including a lower portion and an upper portion stacked upon the lower portion. The lower portion includes a first patterned conductive pad, a first conductive connector passing through the first patterned conductive pad, a first patterned dielectric layer covering the first patterned conductive pad and laterally isolating the first conductive connector from the first patterned conductive pad. The upper portion includes a second conductive connector bonded to the first conductive connector, and a second patterned dielectric layer bonded to the first patterned dielectric layer.


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