The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Oct. 18, 2021
Qualcomm Incorporated, San Diego, CA (US);
Michelle Yejin Kim, San Diego, CA (US);
Kuiwon Kang, San Diego, CA (US);
Joan Rey Villarba Buot, Escondido, CA (US);
Ching-Liou Huang, San Diego, CA (US);
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
Integrated circuit (IC) packages employing a supplemental metal layer coupled to embedded metal traces in a die-side embedded trace substrate (ETS) layer to reduce metal density mismatch, and related fabrication methods. An IC package includes a semiconductor die ('die') electrically coupled to a package substrate. The package substrate includes a die-side ETS metallization layer adjacent to and coupled to the die. To reduce or avoid metal density mismatch between the die-side ETS metallization layer and another metallization layer(s) in the package substrate, a supplemental metal layer with additional metal interconnects is disposed adjacent to the die-side ETS metallization layer. The additional metal interconnects are coupled in a vertical direction to the embedded metal traces in the die-side ETS metallization layer to increase metal density of die-side metal interconnects formed by the additional metal interconnects coupled to the embedded metal traces in the die-side ETS metallization layer.