The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jul. 19, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Chia Hu, Taipei, TW;

Sen-Bor Jan, Tainan, TW;

Hsien-Wei Chen, Hsinchu, TW;

Ming-Fa Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76805 (2013.01); H01L 22/32 (2013.01); H01L 23/528 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/09 (2013.01); H01L 24/80 (2013.01); H01L 24/08 (2013.01); H01L 2224/03 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/08235 (2013.01); H01L 2224/80447 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/14 (2013.01);
Abstract

A semiconductor device including a test pad contact and a method of manufacturing the semiconductor device are disclosed. In an embodiment, a semiconductor device may include a first metal feature and a second metal feature disposed in a single top metal layer over a substrate. A test pad may be formed over and electrically connected to the first metal feature. A first passivation layer may be formed over the second metal feature and the test pad and may cover top and side surfaces of the test pad. A first via may be formed penetrating the first passivation layer and contacting the test pad and a second via may be formed penetrating the first passivation layer and contacting the second metal feature.


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