The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
May. 26, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Lun Lu, New Taipei, TW;
Jih-Sheng Yang, Hsinchu, TW;
Chen-Wei Pan, Hsinchu County, TW;
Chih-Teng Liao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes providing a device having a gate stack with a metal gate layer and a spacer layer disposed on a sidewall of the gate stack. In some embodiments, the method further includes performing an etch-back process to the metal gate layer to form an opening over the gate stack. In various examples, the method further includes performing a plasma treatment process to modify a profile of the opening. In some cases, the method further includes forming a HM layer over the metal gate layer and within the opening having the modified profile.