The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Apr. 18, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Vijayakrishna J. Vankayala, Allen, TX (US);

Hari Giduturi, Folsom, CA (US);

Jeffrey E. Koelling, Fairview, TX (US);

Mingdong Cui, Folsom, CA (US);

Ramachandra Rao Jogu, Mckinney, TX (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0023 (2013.01); G11C 13/0004 (2013.01); G11C 2213/15 (2013.01); H03K 19/20 (2013.01);
Abstract

The present disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the memory array, wherein the decoder circuitry comprises a p-type transistor having a first gate, a first n-type transistor having a second gate, and a second n-type transistor having a third gate, and pre-decoder circuitry configured to provide a bias condition for the first gate, the second gate, and the third gate to provide a selection signal to one of the plurality of memory cells, wherein the bias condition comprises zero volts for the first gate, the second gate, and the third gate for a positive configuration for the memory cells and a negative voltage for the third gate and zero volts for the first gate and the second gate for a negative configuration for the memory cells.


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