The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

May. 28, 2021
Applicant:

Etron Technology, Inc., Hsinchu, TW;

Inventors:

Chao-Chun Lu, Taipei, TW;

Bor-Doou Rong, Zhubei, TW;

Chun Shiah, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G11C 11/4096 (2013.01);
Abstract

This invention discloses sustainable DRAM with principle power supply voltage which is unified with an external logic circuit. The DRAM circuit is configured to couple with the external logic circuit and with a principle power supply voltage source. The DRAM circuit comprises a first sustaining voltage generator and a DRAM core circuit. The first sustaining voltage generator generates a first voltage level which is higher than a voltage level corresponding to a signal ONE utilized in the DRAM circuit. The DRAM core circuit has a DRAM cell comprising an access transistor and a storage capacitor, and the storage capacitor of the DRAM cell is configured to selectively coupled to the first sustaining voltage generator. Wherein, a voltage level of the principle power supply voltage source to the DRAM circuit is the same or substantially the same as that of a principle power supply voltage source to the external logic circuit.


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