The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Nov. 07, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Sheng Chang, Hsinchu, TW;

Chia-En Huang, Hsinchu, TW;

Chien-Ying Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 1/70 (2012.01); G06F 30/398 (2020.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 1/70 (2013.01); G06F 30/398 (2020.01);
Abstract

A memory device includes a bit line, a word line, a memory cell including a capacitor and a transistor, and a controller. The transistor has a gate terminal coupled to the word line, a first terminal, and a second terminal. The capacitor has a first end coupled to the first terminal of the transistor, a second end coupled to the bit line, and an insulating material between the first end and the second end. The controller, in a programming operation, applies a turn-ON voltage via the word line to the gate terminal of the transistor to turn ON the transistor, and applies a program voltage via the bit line to the second end of the capacitor to apply, while the transistor is turned ON, a predetermined break-down voltage or higher between the first end and the second end of the capacitor to break down the insulating material of the capacitor.


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