The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jul. 26, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chia-Ta Yu, New Taipei, TW;
Sheng-Chen Wang, Hsinchu, TW;
Feng-Cheng Yang, Hsinchu County, TW;
Yen-Ming Chen, Hsin-Chu County, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first fin and a second fin protruding from a substrate, isolation features over the substrate to separate the first and the second fins, where a top surface of each of the first and the second fins is below a top surface of the isolation features, inner fin spacers disposed along inner sidewalls of the first and the second fins, where the inner fin spacers have a first height measured from a top surface of the isolation features, outer fin spacers disposed along outer sidewalls of the first and the second fins, where the outer fin spacers have a second height measured from the top surface of the isolation features that is less than the first height, and a source/drain (S/D) structure merging the first and the second fins, where the S/D structure includes an air gap having a top portion over the inner fin spacers.