The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jul. 27, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Jung-Hao Chang, Taichung, TW;
Li-Te Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01);
Abstract
A method includes forming a gate structure across a channel region from a top view, the gate structure comprising a work function metal and a gate dielectric layer wrapping around the work function metal, the gate dielectric layer having a U-shaped cross-sectional profile; performing a first plasma etching process, by using a chlorine-containing reactant, on the gate structure; performing a second plasma etching process, by using a bromine-containing, reactant on the gate structure.