The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Feb. 05, 2020
Tokyo Electron Limited, Tokyo, JP;
Hoyoung Kang, Schenectady, NY (US);
Lars Liebmann, Mechanicville, NY (US);
Jeffrey Smith, Clifton Park, NY (US);
Anton Devilliers, Clifton Park, NY (US);
Daniel Chanemougame, Niskayuna, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Aspects of the disclosure provide a method for fabricating a semiconductor device. The method includes forming dummy power rails on a substrate by accessing from a first side of the substrate that is opposite to a second side of the substrate. Further, the method includes forming transistor devices and first wiring layers on the substrate by accessing the first side of the substrate. The dummy power rails are positioned below a level of the transistor devices on the first side of the substrate. Then, the method includes replacing the dummy power rails with conductive power rails by accessing from the second side of the substrate that is opposite to the first side of the substrate.