The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jun. 05, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wen-Chun Wang, Taichung, TW;

Tzy-Kuang Lee, Taichung, TW;

Chih-Hsien Lin, Tainan, TW;

Ching-Hung Kao, Tainan, TW;

Yen-Yu Chen, Taichung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/56 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/76871 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01);
Abstract

Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.


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