The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jun. 09, 2021
Applicant:

Via Labs, Inc., New Taipei, TW;

Inventor:

Sheng-Yuan Lee, New Taipei, TW;

Assignee:

VIA LABS, INC., New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/20 (2025.01); H01F 27/28 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01F 27/2804 (2013.01); H01L 23/5226 (2013.01); H10D 1/20 (2025.01); H01F 2027/2809 (2013.01);
Abstract

A multilayer-type on-chip inductor with a conductive structure includes an insulating redistribution layer disposed on an inter-metal dielectric (IMD) layer, and first and second winding portions symmetrically arranged in the IMD layer and the insulating redistribution layer with respect to a symmetrical axis. The first and second winding portions each includes at least first and second semi-circular stacking layers arranged from the inside to the outside and in concentricity. The first and second semi-circular stacking layers each has a first trace layer in the insulating redistribution layer and a second trace layer in the IMD layer and correspondingly formed below the first trace layer. A first slit opening passes through the second trace layer and extends in the extending direction of the length of the second trace layer.


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