The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jan. 16, 2023
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventors:

Shou-Zen Chang, Hsinchu, TW;

Chun-Lin Lu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H10D 48/32 (2025.01); H10D 89/00 (2025.01);
U.S. Cl.
CPC ...
H01L 21/02123 (2013.01); H01L 21/02175 (2013.01); H01L 21/76816 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H10D 48/366 (2025.01); H10D 89/217 (2025.01); H01L 2224/05085 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01);
Abstract

A multilayer stacking wafer bonding structure is provided in the present invention, including a logic wafer with a substrate and a logic circuit layer on the substrate, multiple memory wafers bonded sequentially on the logic circuit layer to form a first multilayer stacking structure, wherein each memory wafer includes a memory layer, a silicon layer on the memory layer and multiple oxide layers in trenches of the silicon layer, and the oxide layers in the memory wafers are aligned each other in a direction vertical to the substrate, and multiple through-oxide vias (TOV) extending through the memory layers and the oxide layers in the first multilayer stacking structure into the logic circuit layer, and the TOVs do not extend through any of the silicon layers.


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