The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Sep. 27, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Ryota Ifuku, Nirasaki, JP;
Makoto Wada, Nirasaki, JP;
Nobutake Kabuki, Nirasaki, JP;
Takashi Matsumoto, Nirasaki, JP;
Hiroshi Terada, Nirasaki, JP;
Genji Nakamura, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 2/06 (2006.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01); C23C 16/513 (2006.01);
U.S. Cl.
CPC ...
C23C 16/26 (2013.01); C23C 16/0209 (2013.01); C23C 16/0227 (2013.01); C23C 16/0272 (2013.01); C23C 16/4408 (2013.01); C23C 16/513 (2013.01);
Abstract
A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.