The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Dec. 20, 2021
Applicant:
Enkris Semiconductor, Inc., Suzhou, CN;
Inventors:
Kai Cheng, Suzhou, CN;
Liyang Zhang, Suzhou, CN;
Assignee:
ENKRIS SEMICONDUCTOR, INC., Suzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/825 (2025.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H10H 20/825 (2025.01); H01L 25/0753 (2013.01); H10H 20/0137 (2025.01);
Abstract
Disclosed are a light-emitting device, a template of the light-emitting device and preparation methods thereof. The template of the light-emitting device comprises a substrate; a GaN-based semiconductor layer and a mask layer provided on the substrate, where the mask layer comprises a plurality of mask openings provided at intervals, and the plurality of mask openings are filled with the GaN-based semiconductor layer; and a sacrificial layer provided on a surface of the GaN-based semiconductor layer away from the substrate and located in the plurality of mask openings provided at intervals.