The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Apr. 11, 2024
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd, Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/66 (2025.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10D 30/67 (2025.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H10D 64/668 (2025.01); H10D 30/0281 (2025.01); H10D 30/65 (2025.01); H10D 30/6711 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to under-body source contact structures and methods of manufacture. The structure includes: a gate structure on a semiconductor layer; a drift region within the semiconductor layer, below the gate structure; a body region within the semiconductor layer, below the gate structure; a contact region within the body region, the contact region being devoid of a silicide contact; and a silicide contact remote from the contact region within the semiconductor layer.