The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Feb. 08, 2022
Tokyo Electron Limited, Tokyo, JP;
Mark I. Gardner, Albany, NY (US);
H. Jim Fulford, Albany, NY (US);
Partha Mukhopadhyay, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Methods for the manufacture of semiconductor devices constructed with three-dimensional (3D) horizontal nano sheets with high mobility two-dimensional (2D) material channels are disclosed. Aspects can include forming a semiconductor material; selectively forming a seed material around the bridge; selectively forming a two-dimensional (2D) material around the seed material; forming an active gate around a central portion of the 2D material thereby exposing end portions of the 2D material; and growing source/drain structures coupled to the end portions of the 2D material, respectively.