The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Mar. 15, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Meng-Huan Jao, Hsinchu, TW;
Huan-Chieh Su, Hsinchu, TW;
Yi-Bo Liao, Hsinchu, TW;
Cheng-Chi Chuang, Hsinchu, TW;
Jin Cai, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A device includes a substrate. A channel region of a transistor overlies the substrate and a source/drain region is in contact with the channel region. The source/drain region is adjacent to the channel region along a first direction. A source/drain contact is disposed on the source/drain region. A gate electrode is disposed on the channel region and a gate contact is disposed on the gate electrode. A first low-k dielectric layer is disposed between the gate contact and the source/drain contact along the first direction.