The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Mar. 21, 2024
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Te-Chih Hsiung, Taipei, TW;
Jyun-De Wu, Hsinchu, TW;
Yi-Chen Wang, Hsinchu, TW;
Yi-Chun Chang, Hsinchu, TW;
Yuan-Tien Tu, Puzih, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6219 (2025.01); H01L 21/76804 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53266 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 64/01 (2025.01); H10D 64/513 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01);
Abstract
Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.