The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Apr. 01, 2024
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTUIRNG CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/031 (2025.01); H01L 21/7624 (2013.01); H10D 30/026 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 30/6758 (2025.01); H10D 62/151 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H01L 21/02236 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/2253 (2013.01); H01L 21/26533 (2013.01); H10D 62/121 (2025.01);
Abstract
A semiconductor structure includes a substrate, an oxide layer disposed over the substrate, a stack of semiconductor layers disposed over the oxide layer, and an epitaxial source/drain (S/D) feature disposed adjacent to the stack of semiconductor layers. A portion of the epitaxial S/D feature is horizontally surrounded by the oxide layer.