The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
May. 10, 2024
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Hong Yu, Clifton Park, NY (US);
Judson R. Holt, Ballston Lake, NY (US);
Alexander Derrickson, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 10/60 (2025.01); H10D 10/01 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 62/822 (2025.01);
U.S. Cl.
CPC ...
H10D 10/60 (2025.01); H10D 10/061 (2025.01); H10D 62/134 (2025.01); H10D 62/137 (2025.01); H10D 62/184 (2025.01); H10D 62/822 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.