The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jun. 25, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hung-Wei Li, Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu, TW;
Chia-Ta Yu, New Taipei, TW;
Chih-Yu Chang, New Taipei, TW;
Wen-Ling Lu, Taoyuan, TW;
Yu-Chien Chiu, Hsinchu, TW;
Ya-Yun Cheng, Taichung, TW;
Mauricio Manfrini, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a gate electrode disposed in an insulating material layer, a ferroelectric dielectric layer disposed over the gate electrode, a metal oxide semiconductor layer disposed over the ferroelectric dielectric layer, a source feature disposed over the metal oxide semiconductor layer, wherein the source feature has a first dimension, and a source extension. The source extension includes a first portion disposed over the source feature, wherein the first portion has a second dimension that is greater than the first dimension. The source extension also includes a second portion extending downwardly from the first portion to an elevation that is lower than a top surface of the source feature.