The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Oct. 06, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Anthony Dongick Lee, Hwaseong-si, KR;
Sangcheol Na, Seoul, KR;
Kichul Park, Suwon-si, KR;
Doohwan Park, Yongin-si, KR;
Kyoungwoo Lee, Hwaseong-si, KR;
Rakhwan Kim, Suwon-si, KR;
Yoonsuk Kim, Hwaseong-si, KR;
Jinnam Kim, Anyang-si, KR;
Hoonjoo Na, Seoul, KR;
Eunji Jung, Hwaseong-si, KR;
Juyoung Jung, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate. A wiring layer is over the substrate. A first via structure directly contacts a lower portion of the wiring layer. A second via structure directly contacts an upper portion of the wiring layer. The first via structure generates first stress in the wiring layer. The second via structure generates second stress in the wiring layer. The second stress is of an opposite type to the first stress. The first stress and the second stress compensate for each other in the wiring layer.