The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Sep. 23, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Koichi Motoyama, Clifton Park, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Jennifer Church, Albany, NY (US);

Oleg Gluschenkov, Tannersville, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76805 (2013.01); H01L 21/76819 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01); H01L 23/53295 (2013.01); H10D 86/011 (2025.01);
Abstract

Semiconductor devices and methods of making the same include a first lower device and a second lower device on a substrate. A first upper device is over the first lower device and a second upper device is over the second lower device. A first lower contact extends from a height above the first upper device and makes electrical contact with a top surface and a sidewall surface of the first lower device. A second lower contact extends from a height above the second upper device and makes electrical contact with a top surface and a sidewall surface of the second lower device. An insulating barrier is between the first lower contact and the second lower contact.


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