The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
May. 23, 2024
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Pei-Yu Wang, Hsinchu, TW;
Zhi-Chang Lin, Hsinchu County, TW;
Ching-Wei Tsai, Hsinchu, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first fin protruding upwardly from a substrate, a second fin protruding upwardly from the substrate, a first gate structure having a first portion that at least partially wraps around an upper portion of the first fin and a second portion that at least partially wraps around an upper portion of the second fin, a second gate structure having a portion that at least partially wraps around the upper portion of the first fin, and a dielectric feature having a first portion between the first and second portions of the first gate structure. In a lengthwise direction of the first fin, the dielectric feature has a second portion extending to a sidewall of the second gate structure.