The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Aug. 21, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Qintao Zhang, Mt Kisco, NY (US);

Rajesh Prasad, Lexington, MA (US);

Jun-Feng Lu, Shanghai, CN;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01L 21/31116 (2013.01);
Abstract

A method of forming a semiconductor device may include forming a plurality of fins extending from a buried oxide layer, wherein a masking layer is disposed atop each of the plurality of fins, and performing a high-temperature ion implant to the semiconductor device. The method may further include performing an etch process to remove the masking layer from atop each of the plurality of fins, wherein the etch process does not remove the buried oxide layer.


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