The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Sep. 02, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Munehito Kagaya, Yamanashi, JP;
Yusuke Suzuki, Yamanashi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
C23C 16/345 (2013.01); C23C 16/042 (2013.01); C23C 16/045 (2013.01);
Abstract
A SiN film embedding method includes: an operation of adsorbing an aminosilane-based precursor inside a recess formed on a surface of a substrate; an operation of forming a SiN film inside the recess by plasmarizing and supplying a nitrogen gas into the recess to nitride the aminosilane-based precursor; and an operation of forming an adsorption-inhibiting region for the aminosilane-based precursor on an upper portion inside the recess by plasmarizing and supplying a non-halogen gas substantially more to the upper portion than a lower portion inside the recess.