The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Feb. 03, 2022
Tokyo Electron Limited, Tokyo, JP;
H. Jim Fulford, Albany, NY (US);
Mark I. Gardner, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Aspects of the present disclosure provide 3D semiconductor structures and methods for fabricating the same. For example, the method can include forming a first multilayer stack over a substrate, forming a second multilayer stack over the first multilayer stack, forming a first opening through the first and second multilayer stack until uncovering a top surface of the substrate, forming in the first opening a first vertical field-effect transistor (VFET) over the substrate, and forming in the first opening a second VFET over the first VFET. The first VFET can include a first channel having a first length corresponding to a first thickness of a first layer of the first multilayer stack. The second VFET can include a second channel having a second length corresponding to a second thickness of a second layer of the second multilayer stack. The second thickness can be different from the first thickness.