The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Mar. 17, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hsueh-Han Lu, Tainan, TW;

Kun-Ei Chen, Tainan County, TW;

Chen-Chieh Chiang, Kaohsiung, TW;

Ling-Sung Wang, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H01L 21/0223 (2013.01); H01L 21/0228 (2013.01); H10D 30/6211 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor structure and a method are provided. The method includes patterning a substrate to form a first fin structure in a first region and a second fin structure in a second region, wherein a first width of the first fin structure is greater than a second width of the second fin structure; forming a protecting layer on the second fin structure; and forming a first oxide layer over the first fin structure and forming a second oxide layer over the protecting layer, wherein a width of the first oxide layer is greater than a width of the second oxide layer.


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