The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Aug. 30, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Kenichi Sano, Hsinchu, TW;
Chung-Liang Cheng, Changhua County, TW;
De-Yang Chiou, Hsinchu, TW;
Kuanliang Liu, Pingtung County, TW;
Pinyen Lin, Rochester, NY (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 21/6708 (2013.01); H01L 21/76814 (2013.01);
Abstract
A method of fabricating a semiconductor structure and the semiconductor structure are disclosed. The method uses high flow rate of an etchant and an optimized scan pattern, so that the obtained semiconductor structure is a device upside-down bonded to the carrier wafer without any silicon remaining and is ready for subsequent lithography process for back via contact.