The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Nov. 29, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsin-Chang Lee, Hsinchu, TW;

Ping-Hsun Lin, Hsinchu, TW;

Chih-Cheng Lin, Hsinchu, TW;

Chia-Jen Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/44 (2012.01); G03F 1/42 (2012.01); G03F 1/84 (2012.01); G03F 1/22 (2012.01); G03F 1/54 (2012.01); G03F 1/72 (2012.01); G03F 1/76 (2012.01); G03F 1/78 (2012.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 1/44 (2013.01); G03F 1/42 (2013.01); G03F 1/84 (2013.01); G03F 1/22 (2013.01); G03F 1/54 (2013.01); G03F 1/72 (2013.01); G03F 1/76 (2013.01); G03F 1/78 (2013.01); G03F 7/2004 (2013.01); H01L 21/0274 (2013.01);
Abstract

A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.


Find Patent Forward Citations

Loading…