The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Mar. 16, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Rui Chen, Yilan County, TW;
Yi-Fan Chen, New Taipei, TW;
Szu-Ying Chen, Hsinchu, TW;
Sen-Hong Syue, Hsinchu County, TW;
Huicheng Chang, Tainan, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes forming a sacrificial gate structure over a substrate, depositing a spacer layer on the sacrificial gate structure in a conformal manner, performing a multi-step oxidation process to the spacer layer, etching the spacer layer to form gate sidewall spacers on opposite sidewalls of the sacrificial gate structure, removing the sacrificial gate structure to form a trench between the gate sidewalls spacers, and forming a metal gate structure in the trench.