The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Sep. 02, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/40 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10D 62/405 (2025.01); H10D 30/6735 (2025.01); H10D 64/017 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
Abstract
A semiconductor structure includes N-type MBC transistors formed over a first region of a hybrid substrate and P-type MBC transistors formed over a second region of the hybrid substrate. The first region and the second region have top surfaces with different crystal orientations. Particularly, the first region for forming the N-type MBC transistors includes a top surface having a () crystal plane and the second region for forming P-type MBC transistors includes a top surface having a () crystal plane.