The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jun. 19, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Guangsu Shao, Hefei, CN;

Xingsong Su, Hefei, CN;

Deyuan Xiao, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/03 (2023.02); H10B 12/30 (2023.02);
Abstract

Embodiment relates to the field of semiconductor technology, and more particularly, to a memory, a semiconductor structure and a formation method thereof. The formation method of the present disclosure includes: providing a substrate; forming a plurality of groups of support pillars spaced apart along a first direction in the substrate, each of the plurality of groups of support pillars being spaced apart along a second direction, the first direction intersecting with the second direction; forming a support layer filling up top gaps between adjacent two of the support pillars; forming an epitaxial pillar on a top of each of the support pillars respectively by means of an epitaxial growth process; and forming a capacitor structure on a surface of a structure jointly constituted by each of the epitaxial pillars and each of the support pillars.


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