The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
May. 21, 2024
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jen-Yuan Chang, Hsinchu, TW;
Chia-Ping Lai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure includes receiving a die; forming a dielectric layer to surround the die; removing a portion of the dielectric layer to form a first recess; disposing a first light blocking layer within the first recess; applying a dielectric paste over the first light blocking layer; removing a portion of the dielectric paste to form a second recess; disposing a second light blocking layer within the second recess; disposing a photoelectric device over the first light blocking layer and the second light blocking layer; forming a redistribution layer over the die, the dielectric layer and the photoelectric device; removing a portion of the redistribution layer to form a third recess over the photoelectric device; and coupling a light-conducting member to the photoelectric device through the third recess; wherein the second light blocking layer is separated from the first light blocking layer and the photoelectric device.