The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Oct. 16, 2023
Applicant:

Deca Technologies Usa, Inc., Tempe, AZ (US);

Inventors:

David Ryan Bartling, Mesa, AZ (US);

Craig Bishop, Scottsdale, AZ (US);

Timothy L. Olson, Phoenix, AZ (US);

Assignee:

Deca Technologies USA, Inc., Tempe, AZ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 23/3178 (2013.01); H01L 23/53271 (2013.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01);
Abstract

A method of forming a semiconductor device can comprise providing a first shift region in which to determine a first displacement. A second shift region may be provided in which to determine a second displacement. A unique electrically conductive structure may be formed comprising traces to account for the first displacement and the second displacement. The electrically conductive structure may comprise traces comprising a first portion within the first shift region and a second portion of traces in the second shift region laterally offset from the first portion of traces. A third portion of the traces may be provided in the routing area between the first shift region and the second shift region. A unique variable metal fill may be formed within the fill area. The variable metal fill may be electrically isolated from the unique electrically conductive structure.


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