The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jul. 18, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Takehito Koshizawa, San Jose, CA (US);

Karthik Janakiraman, San Jose, CA (US);

Rui Cheng, San Jose, CA (US);

Krishna Nittala, San Jose, CA (US);

Menghui Li, Mountain View, CA (US);

Ming-Yuan Chuang, Boise, ID (US);

Susumu Shinohara, Yokohama, JP;

Juan Guo, San Jose, CA (US);

Xiawan Yang, San Jose, CA (US);

Russell Chin Yee Teo, Palo Alto, CA (US);

Zihui Li, Santa Clara, CA (US);

Chia-Ling Kao, San Jose, CA (US);

Qu Jin, Santa Clara, CA (US);

Anchuan Wang, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32146 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01J 37/32091 (2013.01); H01J 2237/334 (2013.01); H01L 21/32055 (2013.01);
Abstract

Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.


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