The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Dec. 10, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Sangwoo Kim, Yongin-si, KR;
Minsu Seol, Seoul, KR;
Hyeonjin Shin, Suwon-si, KR;
Minseok Shin, Suwon-si, KR;
Pin Zhao, Suwon-si, KR;
Taehyeong Kim, Suwon-si, KR;
Jaehwan Jung, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Abstract
A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.