The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Aug. 03, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hamed Hajibabaeinajafabadi, Albany, NY (US);
Akiteru Ko, Albany, NY (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/38 (2006.01); G03F 7/004 (2006.01); G03F 7/36 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G03F 7/38 (2013.01); G03F 7/0042 (2013.01); G03F 7/0043 (2013.01); G03F 7/36 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/76898 (2013.01);
Abstract
A method for processing a substrate includes forming a metal oxide resist over the substrate, exposing the metal oxide resist to an extreme ultraviolet light pattern, and flowing a selective gas over the metal oxide resist. The selective gas increases a selectivity of the exposed metal oxide resist to a developing gas. The method further includes flowing the developing gas over the metal oxide resist in a processing chamber and etching the substrate using remaining portions of the metal oxide resist as a mask.