The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Nov. 27, 2023
Applicant:

Basf SE, Ludwigshafen am Rhein, DE;

Inventors:

Joannes Theodorus Valentinus Hoogboom, Ludwigshafen, DE;

Jhih Jheng Ke, Taoyuan, TW;

Che Wei Wang, Taoyuan, TW;

Andreas Klipp, Ludwigshafen, DE;

Yi Ping Cheng, Taoyuan, TW;

Assignee:

BASF SE, Ludwigshafen am Rhein, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/20 (2006.01); C07D 265/30 (2006.01); C09K 13/00 (2006.01); C23F 1/44 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); C07D 265/30 (2013.01); C23F 1/20 (2013.01); C23F 1/44 (2013.01); H01L 21/31111 (2013.01);
Abstract

A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt, and a corresponding process, are described. Further described is a process for the manufacture of a semiconductor device, including the step of selectively etching at least one layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt by contacting the at least one layer including an aluminum compound with the described composition.


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