The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Sep. 19, 2022
Intel Corporation, Santa Clara, CA (US);
Guillaume Bouche, Portland, OR (US);
Andy Chih-Hung Wei, Yamhill, OR (US);
Sean T. Ma, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Discussed herein is gate spacing in integrated circuit (IC) structures, as well as related methods and components. For example, in some embodiments, an IC structure may include: a first gate metal having a longitudinal axis; a second gate metal, wherein the longitudinal axis of the first gate metal is aligned with a longitudinal axis of the second gate metal; a first dielectric material continuously around the first gate metal; and a second dielectric material continuously around the second gate metal, wherein the first dielectric material and the second dielectric material are present between the first gate metal and the second gate metal.